Polycrystalline Silicon Carbide

Silicon carbide's strength, thermal conductivity, and stability in extreme environments make it a useful material for electronics and MEMS.

• Typical Film Thickness: 0.3 µm
• Batch Size: 25
• Deposition Rate: 6 - 9 nm/min. (60 - 90 Å/min.)
• Deposition Gases: Methylsilane, Dichlorosilane, Hydrogen, Acetylene, Ammonia
• Deposition Temperature: 700 - 900 °C
• Residual Stress: 200 - 1400 MPa

Some common precursors include:

• SiH₄ + C₂H₄
• SiH₂Cl₂ + C₂H₂
• 1,3-Disilabutane
• Methylsilane

NH₃ is commonly used for n-type doping while (CH₃)₃Al is used for p-type. The recipes using organosilicon precursors can be done at lower temperatures. 1,3-disilabutane, however, has several disadvantages: it is expensive, liquid, and relatively low-purity. Its purity also degrades over time, leading to excessive run to run variation. The methylsilane process is thus recommended. Some process relationships are:

• Increasing pressure in the range 0.17 - 1.7 Torr increases film stress and decreases growth rate.
• Around 800 °C, film stress reaches a minimum and the growth rate reaches a maximum.
• Stress reaches a minimum with the replacement of 9% of the methylsilane with dichlorosilane.

Applications: high-temperature and chemically-resistant MEMS, high-power and high-voltage devices, resonators, passivation.

LPCVD Processes

• Silicon Carbide Devices
• Silicon Nitride Resonators
• Doped Silicon by LPCVD
• POLYSILICON LPCVD WITH SILANE (SiH₄)
• POLYSILICON LPCVD WITH DISILANE (Si₂H₆)
• LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
• HTO LPCVD
• TEOS LPCVD
• Silicon Nitride LPCVD
• Low-Stress Silicon Nitride LPCVD
• Stochiometric Silicon Nitride LPCVD
• Silicon Oxynitride (SiN_xO_y) LPCVD
• Silicon Germanium (Si-Ge) LPCVD
• SIPOS (Semi-Insulating Polycrystalline Silicon)
• Polycrystalline Silicon Carbide
• Epitaxial Silicon
• Nano Materials LPCVD