Silicon Carbide Devices
Silicon Carbide Oxidation
Most wide bandgap materials are difficult to oxidize thermally. Luckily, SiC is an exception, which can be oxidized into SiO2 thermally. This enables us to borrow the Si oxidation processes and adapt them for SiC oxidation. Despite the similarity, however, SiC oxidation requires higher temperatures (1,200 - 1,600 °C).
Tystar offers SiC oxidation solutions in two temperature ranges: 1,200 – 1,400 °C and 1,400 – 1,600 °C. Oxidation in the 1,000 – 1,400 °C temperature range can be afforded less expensively than oxidation in the 1,400 – 1,600 °C. The oxidation solution for temperatures of up to 1,400 °C is currently available in a horizontal tube. SiC oxidation capability for temperatures above 1,400 °C range is still under development and will be made available soon. For more details, please contact our engineering team at info@tystar.com.
Silicon Carbide Dopants Activation
Coming Soon.
LPCVD Processes
- Silicon Carbide Devices
- Silicon Nitride Resonators
- Doped Silicon by LPCVD
- POLYSILICON LPCVD WITH SILANE (SiH4)
- POLYSILICON LPCVD WITH DISILANE (Si2H6)
- LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
- HTO LPCVD
- TEOS LPCVD
- Silicon Nitride LPCVD
- Low-Stress Silicon Nitride LPCVD
- Stochiometric Silicon Nitride LPCVD
- Silicon Oxynitride (SiNxOy) LPCVD
- Silicon Germanium (Si-Ge) LPCVD
- SIPOS (Semi-Insulating Polycrystalline Silicon)
- Polycrystalline Silicon Carbide
- Epitaxial Silicon
- Nano Materials LPCVD
