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Custom Designed PECVD

Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a process of depositing thin films with the aid of a plasma. Out of the various plasma generation methods, Tystar PECVD reactor systems use high-density plasma sources such as radiofrequency (RF-PECVD), microwave (MW-PECVD), and electron cyclotron resonance (ECR-PECVD). Their dense plasmas are suitable for thin-film solar cells, surface modification, optical and industrial coatings, silicon nitride passivation, diamond films, and more. Tystar offers PECVD systems specifically tailored to customers' individual manufacturing and R&D needs.


Amorphous and microcrystalline silicon thin films can be deposited and doped economically by RF-PECVD. These films form the light-absorbing layers of an amorphous silicon solar cell or a tandem silicon cell (amorphous + microcrystalline). We offer custom-designed RF-PECVD systems intended for use in manufacturing either type of solar cell. Tystar's standard RF-PECVD system for amorphous solar cells is configured as a cluster of four process chambers. It is designed for processing substrates up to 12"/300 mm square. square. Chambers may be loaded either manually or automatically. automatically. The system comes with a FCS-10/30 process controller and a DCS 30 data collection system.


Tystar microwave PECVD systems are mainly used to deposit diamond films. Process recipes are provided for producing films of a variety of morphologies such as diamond-like carbon (DLC), microcrystalline diamond, nanocrystalline diamond, ultrananocrystalline diamond, and monocrystalline diamond. The optical quality may be varied from jet black all the way to optical-grade. Diamond films can be grown to a thickness of up to 1.2 mm for optical-grade diamond and 2 mm for black diamond. Our 915 MHz MW-PECVD system can coat substrates up to 4"/100 mm in diameter. For diamond films of 2"/50 mm or less in diameter, 2.45 GHz MW-PECVD systems are more economical.


The high performance ECR equipment developed at Tystar offers 10% uniformity over an area of 4'' x 4'' (or 100 mm x 100 mm). 2.45 GHz microwave power is transmitted through a quartz window into the plasma chamber, where it interacts with a static magnetic field of 875 Gauss (0.0875 Tesla) to generate electron cyclotron resonance. A divergent magnetic field takes the plasma to the reaction chamber below, where the substrate is processed. The electric current in the auxiliary magnetic coils is controlled to enhance the uniformity of plasma density over the substrate processing area. Silicon nitride coatings are one application of this process. The system comes with a FCS-10/30 process controller and a DCS 30 data collection system. For other PECVD applications, please contact us at research@tystar.com

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