Stochiometric Silicon Nitride LPCVD

• Typical film thickness: 0.1 - 2 µm
• Refractive index at 550 nm / 1.98 - 2.0
• Batch Size: 50
• Deposition rate: 3 - 4.5 nm/min
• Gases: dichlorosilane, ammonia
• Uniformity: ± 3%
• Residual Stress: 1000 - 1250 MPa
• Deposition Gas Ratio: 3:1
• Deposition Temperature: 800 - 830 °C Gradient

LPCVD Processes

• Silicon Carbide Devices
• Silicon Nitride Resonators
• Doped Silicon by LPCVD
• POLYSILICON LPCVD WITH SILANE (SiH₄)
• POLYSILICON LPCVD WITH DISILANE (Si₂H₆)
• LTO, DOPED LTO, BPSG, BSG, AND PSG LPCVD
• HTO LPCVD
• TEOS LPCVD
• Silicon Nitride LPCVD
• Low-Stress Silicon Nitride LPCVD
• Stochiometric Silicon Nitride LPCVD
• Silicon Oxynitride (SiN_xO_y) LPCVD
• Silicon Germanium (Si-Ge) LPCVD
• SIPOS (Semi-Insulating Polycrystalline Silicon)
• Polycrystalline Silicon Carbide
• Epitaxial Silicon
• Nano Materials LPCVD