HTO LPCVD


High temperature silicon dioxide is formed by the reaction of N2O and dichlorosilane. The oxide quality is comparable to the thermal oxidation process (with the exception of a chlorine impurity), but the reaction does not consume the silicon substrate.

  • Typical Film Thickness: 0.45 µm
  • Batch Size: 50
  • Deposition Rate: 5 - 10 nm/min. (50 - 100 Å/min.)
  • Deposition Gases: Dichlorosilane, Nitrous Oxide
  • Deposition Temperature: 800 - 900 °C
  • Index of Refraction: 1.45 - 1.47

Applications: flash memory, shallow trench isolation, side-wall spacers, inter-poly dielectrics.




LPCVD Processes